Yang Suk
1Patents
1h-index
6Co-inventors
25Inventor score
Filing activity: Feb 8, 2002 → Feb 8, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6852597B2 | Method for fabricating power semiconductor device having trench gate structure | Electricity | 53 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.