Youngman Ahn
1Patents
1h-index
2Co-inventors
22Inventor score
Filing activity: Apr 30, 2020 → Apr 30, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10957414B1 | Method of test and repair of memory cells during power-up sequence of memory device | Physics | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.