Method for forming of siliceous film and siliceous film formed using same
US10000386B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2013 |
| Grant date | Jun 19, 2018 |
| Priority date | — |
| Expiry date | Nov 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A siliceous film having high purity and a low etching rate is formed by (a) a step for forming a siliceous film on a substrate by coating a solution composed of a polysilazane, e.g., perhydropolysilazane on a substrate and then hardening (curing) the solution in an oxidizing atmosphere, or by coating a silica solution formed by a sol-gel method on a substrate, and (b) a step for heating the siliceous film in an inert gas environment containing a nitrogen-containing compound such as an alkylamine having a base dissociation constant (pKb) no greater than 4.5, or a halogen-containing compound in which the bond energy of a halogen atom such as F2, Br2, or NF3 is no greater than 60 kcal/mol, in order to anneal the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.