Tatsuro Nagahara
23Patents
5h-index
33Co-inventors
69Inventor score
Filing activity: Aug 30, 1990 → Nov 16, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5177578A | Polycrystalline silicon thin film and transistor using the same | Electricity | 33 | Expired |
| US8969172B2 | Method for forming isolation structure | Electricity | 6 | Active |
| US8889229B2 | Method for formation of siliceous film and siliceous film formed by the method | Emerging Cross-Sectional Technologies | 5 | Active |
| US6902875B2 | Photosensitive polysilazane composition, method of forming pattern therefrom, and method of burning coating film thereof | Emerging Cross-Sectional Technologies | 5 | Expired |
| US10792712B2 | Substrate processing method and substrate processing apparatus | Electricity | 5 | Active |
| US9165818B2 | Method for forming insulating film | Electricity | 3 | Active |
| US11211241B2 | Substrate processing method and substrate processing apparatus | Electricity | 3 | Active |
| US10000386B2 | Method for forming of siliceous film and siliceous film formed using same | Electricity | 2 | Active |
| US9029071B2 | Silicon oxynitride film formation method and substrate equipped with silicon oxynitride film formed thereby | Electricity | 2 | Active |
| US9411232B2 | Composition for forming fine resist pattern, and pattern formation method using same | Electricity | 1 | Active |
| US10451974B2 | Rinse composition, a method for forming resist patterns and a method for making semiconductor devices | Physics | 0 | Active |
| US12077727B2 | Semiconductor aqueous composition and use of the same | Chemistry; Metallurgy | 0 | Active |
| US10191380B2 | Composition for resist patterning and method for forming pattern using same | Chemistry; Metallurgy | 0 | Active |
| US10494261B2 | Inorganic polysilazane resin | Emerging Cross-Sectional Technologies | 0 | Active |
| US11260431B2 | Substrate processing method and substrate processing apparatus | Electricity | 0 | Active |
| US12068150B2 | Substrate cleaning solution, and using the same, method for manufacturing cleaned substrate and method for manufacturing device | Chemistry; Metallurgy | 0 | Active |
| US11859152B2 | Substrate pattern filling composition and use of the same | Chemistry; Metallurgy | 0 | Active |
| US11156920B2 | Lithography composition, a method for forming resist patterns and a method for making semiconductor devices | Physics | 0 | Active |
| US11392035B2 | Gap filling composition and pattern forming method using composition containing polymer | Electricity | 0 | Active |
| US10670969B2 | Reverse pattern formation composition, reverse pattern formation method, and device formation method | Physics | 0 | Active |
| US11901173B2 | Substrate processing method | Electricity | 0 | Active |
| US9921481B2 | Fine resist pattern-forming composition and pattern forming method using same | Physics | 0 | Active |
| US11169443B2 | Gap filling composition and pattern forming method using low molecular weight compound | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.