MOCVD system for growth of III-nitride and other semiconductors
US10000845B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 21, 2017 |
| Grant date | Jun 19, 2018 |
| Priority date | — |
| Expiry date | Jun 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An MOCVD system for growing a semiconductor layer on a substrate is provided. The MOCVD system includes an MOCVD growth chamber defined by a jacket having an interior surface and an exterior surface; a water flow chamber surrounding an exterior surface of the jacket of the MOCVD growth chamber; an electronic control system, wherein the electronic control system facilitates pulsed growth of the semiconductor layer; a supply tube comprising a head formed from a hollow structure defining a fitting end and an opposite, shower end, wherein the fitting end has an initial diameter that is less than a diameter at the shower end; and a susceptor configured to hold the substrate and facing the shower end of the supply tube, wherein the MOCVD system operates at a temperature greater than or equal to 1500° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.