Asif Khan
27Patents
6h-index
16Co-inventors
62Inventor score
Filing activity: May 7, 2007 → Dec 8, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8354663B2 | Micro-pixel ultraviolet light emitting diode | Electricity | 15 | Active |
| US8372697B2 | Digital oxide deposition of SiO2 layers on wafers | Electricity | 7 | Active |
| US8304756B2 | Deep ultraviolet light emitting device and method for fabricating same | Electricity | 6 | Active |
| US8507941B2 | Ultraviolet light emitting diode with AC voltage operation | Electricity | 6 | Active |
| US8242484B2 | Vertical deep ultraviolet light emitting diodes | Electricity | 6 | Active |
| US8222669B2 | Mixed source growth apparatus and method of fabricating III-nitride ultraviolet emitters | Electricity | 6 | Active |
| US8563995B2 | Ultraviolet light emitting diode/laser diode with nested superlattice | Electricity | 4 | Active |
| US8686396B2 | Non-polar ultraviolet light emitting device and method for fabricating same | Electricity | 4 | Active |
| US8415654B2 | Low resistance ultraviolet light emitting device and method of fabricating the same | Electricity | 3 | Active |
| US8698191B2 | Ultraviolet light emitting diode with AC voltage operation | Electricity | 3 | Active |
| US9548910B2 | Distributed system architecture using event stream processing | Electricity | 3 | Active |
| US8652958B2 | Vertical deep ultraviolet light emitting diodes | Electricity | 2 | Active |
| US8680551B1 | High power ultraviolet light sources and method of fabricating the same | Electricity | 2 | Active |
| US8354687B1 | Efficient thermal management and packaging for group III nitride based UV devices | Electricity | 2 | Active |
| US8541817B2 | Multilayer barrier III-nitride transistor for high voltage electronics | Electricity | 1 | Active |
| US9142714B2 | High power ultraviolet light emitting diode with superlattice | Electricity | 1 | Active |
| US9543425B2 | Multi-finger large periphery AlInN/AlN/GaN metal-oxide-semiconductor heterostructure field effect transistors on sapphire substrate | Electricity | 1 | Active |
| US9343563B2 | Selectively area regrown III-nitride high electron mobility transistor | Electricity | 1 | Active |
| US12200942B2 | Methods of operating ferroelectric (Fe) FET based non-volatile memory circuits and related control circuits | Electricity | 0 | Active |
| US9059081B2 | Selectively doped semi-conductors and methods of making the same | Emerging Cross-Sectional Technologies | 0 | Active |
| US12243916B2 | Polarization-engineered heterogeneous semiconductor heterostructures | Electricity | 0 | Active |
| US11021789B2 | MOCVD system injector for fast growth of AlInGaBN material | Chemistry; Metallurgy | 0 | Active |
| US8796097B2 | Selectively area regrown III-nitride high electron mobility transistor | Electricity | 0 | Active |
| US10000845B2 | MOCVD system for growth of III-nitride and other semiconductors | Electricity | 0 | Active |
| US9343544B2 | Multi-finger large periphery AlInN/AlN/GaN metal-oxide-semiconductor heterostructure field effect transistors on sapphire substrate | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.