Charge packet signal processing using pinned photodiode devices
US10001406B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 7, 2016 |
| Grant date | Jun 19, 2018 |
| Priority date | — |
| Expiry date | Sep 17, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2001/446
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor may include an array of image pixels coupled to analog-to-digital conversion circuitry formed from pinned photodiode charge transfer circuits. Majority charge carriers for the pinned photodiodes in the charge transfer circuits may be electrons for photodiode wells formed from n-type doped regions and may be holes for photodiode formed from p-type doped regions. Pinned photodiodes may be used for charge integration onto a capacitive circuit node. Pinned photodiodes may also be used for charge subtraction from a capacitive circuit node. Comparator circuitry may be used to determine digital values for the pixel output levels in accordance with single-slope conversion, successive-approximation-register conversion, cyclic conversion, and first or second order delta-sigma conversion techniques. The array of image pixels used for imaging may have a conversion mode wherein at least a portion of the pixel circuitry in the array are operated similar to the charge transfer circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.