Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask, and semiconductor device fabrication method
US10001699B2 · kind B2 · utility
5Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2016 |
| Grant date | Jun 19, 2018 |
| Priority date | — |
| Expiry date | Dec 21, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/33
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 μm−1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.