Patent · US Active

Memory devices formed from correlated electron materials

US10002665B1 · kind B1 · utility

26Cited by

9References

21Claims

0Family size

Assignee

Arm Limited · GB

Inventors

Mudit Bhargava · Austin, US
Piyush Agarwal · Noida, IN
Akshay Kumar · Gothan, IN
Glen Arnold Rosendale · Santa Clara, US

Key dates

Filing date	Apr 5, 2017
Grant date	Jun 19, 2018
Priority date	—
Expiry date	Apr 5, 2037

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/82
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Subject matter provided may relate to devices, such as conducting elements, which operate to place correlated electron switch elements into first and second impedance states. In embodiments, conducting elements are maintained to be at least partially closed continuously during first and second phases of coupling the CES elements between a common source voltage and a corresponding bitline.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.