Patent · US Active

Memory device

US10002667B1 · kind B1 · utility

0Cited by
1References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 2, 2017
Grant dateJun 19, 2018
Priority date
Expiry dateJun 2, 2037

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C19/287
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory device may include N memory areas that are divided into a first group and a second group, and are selected by area selection signals corresponding to the N memory areas among N area selection signals, N*M pipe latches that store output data of memory areas corresponding to the N*M pipe latches among the N memory areas, a first pipe output signal generation circuit that generates 1-1th to 1-Mth pipe output signals of pipe latches, which correspond to memory areas belonging to the first group, in response to an area selection signal corresponding to a predetermined memory area of memory areas, and a second pipe output signal generation circuit that generates 2-1th to 2-Mth pipe output signals of pipe latches, which correspond to memory areas belonging to the second group, in response to an area selection signal corresponding to a predetermined memory area of memory areas.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.