SK hynix Inc.
17,040Patents
14,919Active
17,040Granted
63Portfolio score
Filing activity: Sep 1, 1994 → Jun 20, 2024 · 3,712 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8400851B2 | Output enable signal generation circuit of semiconductor memory | Physics | 995 | Active |
| US7211524B2 | Method of forming insulating layer in semiconductor device | Electricity | 503 | Expired |
| US8293642B2 | Method of manufacturing semiconductor devices | Electricity | 465 | Active |
| US7467632B2 | Method for forming a photoresist pattern | Chemistry; Metallurgy | 462 | Active |
| US7361447B2 | Photoresist polymer and photoresist composition containing the same | Chemistry; Metallurgy | 449 | Expired |
| US7279256B2 | Photoresist polymer and photoresist composition containing the same | Emerging Cross-Sectional Technologies | 449 | Expired |
| US7238653B2 | Cleaning solution for photoresist and method for forming pattern using the same | Chemistry; Metallurgy | 448 | Expired |
| US6607868B2 | Photoresist monomers, polymers thereof, and photoresist compositions containing the same | Emerging Cross-Sectional Technologies | 448 | Expired |
| US6924078B2 | Photoresist monomers, polymers and photoresist compositions for preventing acid diffusion | Emerging Cross-Sectional Technologies | 447 | Expired |
| US7399570B2 | Water-soluble negative photoresist polymer and composition containing the same | Chemistry; Metallurgy | 447 | Expired |
| US8526239B2 | Semiconductor memory device and method of operating the same | Physics | 411 | Active |
| US8625376B2 | Semiconductor memory device and method of operation the same | Physics | 409 | Active |
| US8873272B2 | Semiconductor memory apparatus and test circuit therefor | Physics | 407 | Active |
| US9640542B2 | Semiconductor device having contact pads | Electricity | 379 | Active |
| US8253204B2 | Semiconductor device with strained channel and method of fabricating the same | Electricity | 308 | Active |
| US7910452B2 | Method for fabricating a cylinder-type capacitor utilizing a connected ring structure | Electricity | 308 | Active |
| US6534352B1 | Method for fabricating a MOSFET device | Electricity | 266 | Expired |
| US7525186B2 | Stack package having guard ring which insulates through-via interconnection plug and method for manufacturing the same | Electricity | 240 | Active |
| US7981806B2 | Method for forming trench and method for fabricating semiconductor device using the same | Electricity | 224 | Active |
| US6900485B2 | Unit pixel in CMOS image sensor with enhanced reset efficiency | Electricity | 178 | Expired |
| US6730568B2 | Method for fabricating semiconductor device with ultra-shallow super-steep-retrograde epi-channel by boron-fluoride compound doping | Electricity | 156 | Expired |
| US6667200B2 | Method for forming transistor of semiconductor device | Electricity | 133 | Expired |
| US7332370B2 | Method of manufacturing a phase change RAM device utilizing reduced phase change current | Electricity | 131 | Active |
| US6881987B2 | pMOS device having ultra shallow super-steep-retrograde epi-channel with dual channel doping and method for fabricating the same | Electricity | 129 | Expired |
| US6753230B2 | Method for fabricating semiconductor device with ultra-shallow super-steep-retrograde epi-channel by decaborane doping | Electricity | 127 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.