Semiconductor device
US10002841B2 · kind B2 · utility
0Cited by
0References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2015 |
| Grant date | Jun 19, 2018 |
| Priority date | — |
| Expiry date | Aug 6, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Electrode pads disposed on a first surface of a semiconductor element include a first pad located close to a corner and a second pad located apart from the corner compared with the first pad. A first wire connected to the first pad has a smaller Young's modulus than a second wire connected to the second pad. A thickness of an intermetallic compound layer formed by the first wire and the first pad is larger than a thickness of an intermetallic compound layer formed by the second wire and the second pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.