Akiyoshi Asai
11Patents
9h-index
23Co-inventors
72Inventor score
Filing activity: Apr 15, 1992 → Jul 31, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6191007A | Method for manufacturing a semiconductor substrate | Electricity | 510 | Expired |
| US5488243A | SOI MOSFET with floating gate | Electricity | 90 | Expired |
| US6150697A | Semiconductor apparatus having high withstand voltage | Electricity | 82 | Expired |
| US5751041A | Semiconductor integrated circuit device | Electricity | 42 | Expired |
| US5869872A | Semiconductor integrated circuit device and manufacturing method for the same | Electricity | 38 | Expired |
| US5610426A | Semiconductor integrated circuit device having excellent dual polarity overvoltage protection characteristics | Electricity | 33 | Expired |
| US5786616A | Semiconductor integrated circuit having an SOI structure, provided with a protective circuit | Electricity | 27 | Expired |
| US5663588A | Semiconductor device having an SOI structure of mesa isolation type and manufacturing method therefor | Electricity | 26 | Expired |
| US5279981A | Method of reducing the trap density of an oxide film for application to fabricating a nonvolatile memory cell | Emerging Cross-Sectional Technologies | 10 | Expired |
| US5736770A | Semiconductor device with conductive connecting layer and abutting insulator section made of oxide of same material | Electricity | 9 | Expired |
| US10002841B2 | Semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.