Fin-type field effect transistor structure and manufacturing method thereof
US10002867B2 · kind B2 · utility
3Cited by
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19Claims
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Assignee
Inventors
Key dates
| Filing date | Mar 7, 2016 |
| Grant date | Jun 19, 2018 |
| Priority date | — |
| Expiry date | Mar 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fin-type field effect transistor comprising a substrate, at least one gate stack and epitaxy material portions is described. The substrate has fins and insulators located between the fins, and the fins include channel portions and flank portions beside the channel portions. The at least one gate stack is disposed over the insulators and over the channel portions of the fins. The epitaxy material portions are disposed over the flank portions of the fins and at two opposite sides of the at least one gate stack. The epitaxy material portions disposed on the flank portions of the fins are separate from one another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.