Inventor · Tainan, TW

Kei-Wei Chen

195Patents
6h-index
162Co-inventors
77Inventor score

Filing activity: Jul 20, 2001 → Apr 10, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US7837841B2 Apparatuses for electrochemical deposition, conductive layer, and fabrication methods thereof Emerging Cross-Sectional Technologies 44 Active
US9508556B1 Method for fabricating fin field effect transistor and semiconductor device Electricity 16 Active
US6828226B1 Removal of SiON residue after CMP Electricity 15 Expired
US10164053B1 Semiconductor device and method Electricity 15 Active
US8247322B2 Via/contact and damascene structures and manufacturing methods thereof Electricity 13 Active
US7071100B2 Method of forming barrier layer with reduced resistivity and improved reliability in copper damascene process Electricity 12 Expired
US9570311B2 Modular grinding apparatuses and methods for wafer thinning Performing Operations; Transporting 6 Active
US7183199B2 Method of reducing the pattern effect in the CMP process Electricity 6 Expired
US7368379B2 Multi-layer interconnect structure for semiconductor devices Electricity 5 Expired
US10058974B1 Method for controlling chemical mechanical polishing process Performing Operations; Transporting 5 Active
US7803257B2 Current-leveling electroplating/electropolishing electrode Emerging Cross-Sectional Technologies 5 Active
US9064770B2 Methods for minimizing edge peeling in the manufacturing of BSI chips Electricity 5 Active
US11139432B1 Methods of forming a FinFET device Electricity 5 Active
US7208404B2 Method to reduce Rs pattern dependence effect Electricity 5 Expired
US9947753B2 Semiconductor structure and manufacturing method thereof Electricity 4 Active
US10504782B2 Fin Field-Effect Transistor device and method of forming the same Electricity 4 Active
US8518819B2 Semiconductor device contact structures and methods for making the same Electricity 4 Active
US9676114B2 Wafer edge trim blade with slots Emerging Cross-Sectional Technologies 4 Active
US10201887B2 Polishing pad having grooves on bottom surface of top layer Electricity 4 Active
US10276715B2 Fin field effect transistor and method for fabricating the same Electricity 3 Active
US7199045B2 Metal-filled openings for submicron devices and methods of manufacture thereof Electricity 3 Expired
US9281475B2 Resistive random-access memory (RRAM) with multi-layer device structure Electricity 3 Active
US10002867B2 Fin-type field effect transistor structure and manufacturing method thereof Electricity 3 Active
US9368394B1 Dry etching gas and method of manufacturing semiconductor device Electricity 3 Active
US11145751B2 Semiconductor structure with doped contact plug and method for forming the same Electricity 3 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.