Electronic device and method for fabricating the same
US10002903B2 · kind B2 · utility
1Cited by
2References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2016 |
| Grant date | Jun 19, 2018 |
| Priority date | — |
| Expiry date | Mar 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Implementations of the disclosed technology provide an electronic device including a semiconductor memory, wherein the semiconductor memory includes: a magnetic tunnel junction (MTJ) structure including a free layer having a changeable magnetization direction, a pinned layer having a pinned magnetization direction, and a tunnel barrier layer sandwiched between the free layer and the pinned layer; and an under layer located under the MTJ structure, wherein the under layer includes a first under layer including a silicon-based alloy, and a second under layer located on the first under layer and including a metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.