Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes
US10002928B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2017 |
| Grant date | Jun 19, 2018 |
| Priority date | — |
| Expiry date | Apr 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/82
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a display panel comprising light emitting device including micro LEDs includes providing multiple donor wafers having a surface region and forming an epitaxial material overlying the surface region. The epitaxial material includes an n-type region, an active region comprising at least one light emitting layer overlying the n-type region, and a p-type region overlying the active layer region. The multiple donor wafers are configured to emit different color emissions. The epitaxial material on the multiple donor wafers is patterned to form a plurality of dice, characterized by a first pitch between a pair of dice less than a design width. At least some of the dice are selectively transferred from the multiple donor wafers to a common carrier wafer such that the carrier wafer is configured with different color emitting LEDs. The different color LEDs could comprise red-green-blue LEDs to form a RGB display panel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.