James W. Raring
275Patents
40h-index
59Co-inventors
89Inventor score
Filing activity: Feb 29, 2008 → Jan 2, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8247887B1 | Method and surface morphology of non-polar gallium nitride containing substrates | Electricity | 268 | Active |
| US8314429B1 | Multi color active regions for white light emitting diode | Electricity | 268 | Active |
| US8351478B2 | Growth structures and method for forming laser diodes on {30-31} or off cut gallium and nitrogen containing substrates | Electricity | 235 | Active |
| US8355418B2 | Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates | Electricity | 233 | Active |
| US8259769B1 | Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates | Electricity | 232 | Active |
| US8143148B1 | Self-aligned multi-dielectric-layer lift off process for laser diode stripes | Emerging Cross-Sectional Technologies | 229 | Active |
| US8252662B1 | Method and structure for manufacture of light emitting diode devices using bulk GaN | Electricity | 215 | Active |
| US8422525B1 | Optical device structure using miscut GaN substrates for laser applications | Electricity | 209 | Active |
| US8427590B2 | Laser based display method and system | Electricity | 193 | Active |
| US8124996B2 | White light devices using non-polar or semipolar gallium containing materials and phosphors | Electricity | 189 | Active |
| US8254425B1 | Optical device structure using GaN substrates and growth structures for laser applications | Electricity | 187 | Active |
| US8126024B1 | Optical device structure using GaN substrates and growth structures for laser applications of emissions of 500 nm and greater | Electricity | 187 | Active |
| US8242522B1 | Optical device structure using non-polar GaN substrates and growth structures for laser applications in 481 nm | Electricity | 187 | Active |
| US8294179B1 | Optical device structure using GaN substrates and growth structures for laser applications | Electricity | 182 | Active |
| US8451876B1 | Method and system for providing bidirectional light sources with broad spectrum | Electricity | 138 | Active |
| US8416825B1 | Optical device structure using GaN substrates and growth structure for laser applications | Electricity | 134 | Active |
| US10222474B1 | Lidar systems including a gallium and nitrogen containing laser light source | Electricity | 107 | Active |
| US9246311B1 | Method of manufacture for an ultraviolet laser diode | Electricity | 105 | Active |
| US8509275B1 | Gallium nitride based laser dazzling device and method | Electricity | 96 | Active |
| US10002928B1 | Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes | Electricity | 78 | Active |
| US9666677B1 | Manufacturable thin film gallium and nitrogen containing devices | Electricity | 78 | Active |
| US8634442B1 | Optical device structure using GaN substrates for laser applications | Electricity | 73 | Active |
| US9653642B1 | Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes | Electricity | 72 | Active |
| US8582038B1 | Laser based display method and system | Electricity | 58 | Active |
| US9379525B2 | Manufacturable laser diode | Electricity | 57 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.