Field effect transistor and device thereof

US10002966B1 · kind B1 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• I-Fan Chang · Tainan, TW
• Chi-Ju Lee · Dashulong, TW
• Yen-Liang Wu · Dashulong, TW
• Wen-Tsung Chang · Tainan, TW
• Jui-Ming Yang · New Taipei, TW
• Dien-Yang Lu

Key dates

• Filing date: Jul 21, 2017
• Grant date: Jun 19, 2018
• Expiry date: Jul 21, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/116

Abstract

A field-effect transistor includes a substrate having thereon an isolation region. A fin structure protrudes from a top surface of the isolation region. The fin structure extends along a first direction. A gate electrode strides across the fin structure and extends along a second direction. A fin corner layer wraps a lower portion of the gate electrode around the fin structure. A spacer covers a sidewall of the gate electrode and the fin corner layer.