UNITED MICROELECTRONICS CORP.
9,061Patents
5,183Active
9,061Granted
57Portfolio score
Filing activity: Aug 16, 1989 → Jul 3, 2024 · 706 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6521547B1 | Method of repairing a low dielectric constant material layer | Electricity | 516 | Expired |
| US8114734B2 | Metal capacitor and method of making the same | Electricity | 448 | Active |
| US5481133A | Three-dimensional multichip package | Electricity | 443 | Expired |
| US5627106A | Trench method for three dimensional chip connecting during IC fabrication | Electricity | 424 | Expired |
| US9331200B1 | Semiconductor device and method for fabricating the same | Electricity | 376 | Active |
| US5712185A | Method for forming shallow trench isolation | Electricity | 362 | Expired |
| US6009496A | Microcontroller with programmable embedded flash memory | Physics | 344 | Expired |
| US5611448A | Wafer container | Electricity | 336 | Expired |
| US5380681A | Three-dimensional multichip package and methods of fabricating | Electricity | 331 | Expired |
| US6174812A | Copper damascene technology for ultra large scale integration circuits | Electricity | 329 | Expired |
| US6200897A | Method for manufacturing even dielectric layer | Electricity | 328 | Expired |
| US10204788B1 | Method of forming high dielectric constant dielectric layer by atomic layer deposition | Electricity | 321 | Active |
| US5968610A | Multi-step high density plasma chemical vapor deposition process | Electricity | 320 | Expired |
| US6203863A | Method of gap filling | Electricity | 269 | Expired |
| US5920792A | High density plasma enhanced chemical vapor deposition process in combination with chemical mechanical polishing process for preparation and planarization of intemetal dielectric layers | Electricity | 268 | Expired |
| US9847247B2 | Method for filling gaps of semiconductor device and semiconductor device formed by the same | Electricity | 268 | Active |
| US5378649A | Process for producing non-volatile memory devices having closely spaced buried bit lines and non-overlapping code implant areas | Emerging Cross-Sectional Technologies | 224 | Expired |
| US6384737B1 | Method and apparatus for allowing a personal computer to control one or more devices | Physics | 215 | Expired |
| US6297554A | Dual damascene interconnect structure with reduced parasitic capacitance | Electricity | 209 | Expired |
| US6584439B1 | Method and apparatus for controlling voice controlled devices | Physics | 203 | Expired |
| US6239367A | Multi-chip chip scale package | Electricity | 197 | Expired |
| US5439839A | Self-aligned source/drain MOS process | Electricity | 186 | Expired |
| US5414287A | Process for high density split-gate memory cell for flash or EPROM | Electricity | 180 | Expired |
| US5769719A | Video game system having means for displaying a key programming | Human Necessities | 180 | Expired |
| US6303252A | Reticle having assist feature between semi-dense lines | Physics | 170 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.