Semiconductor device having circuitry positioned above a buried magnetic sensor
US10003013B2 · kind B2 · utility
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11References
13Claims
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Key dates
| Filing date | Aug 28, 2014 |
| Grant date | Jun 19, 2018 |
| Priority date | — |
| Expiry date | Mar 20, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R33/072
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor device including a circuitry, a magnetic sensor, and a buried oxide. The circuitry is formed on a substrate. The magnetic sensor has a sensing area formed under the circuitry. The buried oxide is disposed between the circuitry and the magnetic sensor. The sensing are comprises an N-doped area and a P-doped area doped deeper than the N-doped area, and sensor contacts connect the sensing area with the circuitry through the buried oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.