Inventor · San Mateo, CA, US

Francois Hebert

193Patents
26h-index
92Co-inventors
93Inventor score

Filing activity: Mar 28, 1985 → Mar 25, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US5567634A Method of fabricating self-aligned contact trench DMOS transistors Electricity 163 Expired
US6222229A Self-aligned shield structure for realizing high frequency power MOSFET devices with improved reliability Electricity 102 Expired
US5869875A Lateral diffused MOS transistor with trench source contact Electricity 97 Expired
US5912490A MOSFET having buried shield plate for reduced gate/drain capacitance Electricity 88 Expired
US5439833A Method of making truly complementary and self-aligned bipolar and CMOS transistor structures with minimized base and gate resistances and parasitic capacitance Emerging Cross-Sectional Technologies 66 Expired
US6365447B1 High-voltage complementary bipolar and BiCMOS technology using double expitaxial growth Electricity 65 Expired
US7868431B2 Compact power semiconductor package and method with stacked inductor and integrated circuit die Electricity 59 Active
US6215152A MOSFET having self-aligned gate and buried shield and method of making same Electricity 55 Expired
US5918137A MOS transistor with shield coplanar with gate electrode Electricity 47 Expired
US7786837B2 Semiconductor power device having a stacked discrete inductor structure Electricity 43 Active
US5684319A Self-aligned source and body contact structure for high performance DMOS transistors and method of fabricating same Electricity 41 Expired
US6091110A MOSFET device having recessed gate-drain shield and method Electricity 41 Expired
US5821144A Lateral DMOS transistor for RF/microwave applications Emerging Cross-Sectional Technologies 39 Expired
US5841166A Lateral DMOS transistor for RF/microwave applications Emerging Cross-Sectional Technologies 39 Expired
US7884696B2 Lead frame-based discrete power inductor Electricity 37 Active
US5930635A Complementary Si/SiGe heterojunction bipolar technology Electricity 37 Expired
US6107160A MOSFET having buried shield plate for reduced gate/drain capacitance Electricity 36 Expired
US5411913A Simple planarized trench isolation and field oxide formation using poly-silicon Electricity 34 Expired
US6180995A Integrated passive devices with reduced parasitic substrate capacitance Electricity 31 Expired
US5385861A Planarized trench and field oxide and poly isolation scheme Emerging Cross-Sectional Technologies 29 Expired
US5742091A Semiconductor device having a passive device formed over one or more deep trenches Electricity 29 Expired
US6839207B2 Protection system for protecting a poly-phase distribution transformer insulated in a liquid dielectric, the system including at least one phase disconnector switch Electricity 28 Expired
US5306649A Method for producing a fully walled emitter-base structure in a bipolar transistor Emerging Cross-Sectional Technologies 27 Expired
US5683932A Method of fabricating a planarized trench and field oxide isolation structure Emerging Cross-Sectional Technologies 26 Expired
US6677210B1 High voltage transistors with graded extension Electricity 26 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.