Method of forming an on-pitch self-aligned hard mask for contact to a tunnel junction using ion beam etching
US10003014B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 20, 2014 |
| Grant date | Jun 19, 2018 |
| Priority date | — |
| Expiry date | Dec 8, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1164
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of forming a memory device that in one embodiment may include forming a magnetic tunnel junction on a first electrode using an electrically conductive mask and subtractive etch method. Following formation of the magnetic tunnel junction, at least one dielectric layer is deposited to encapsulate the magnetic tunnel junction. Ion beam etching/Ion beam milling may then remove the portion of the at least one dielectric layer that is present on the electrically conductive mask, wherein a remaining portion of the at least one dielectric layer is present over the first electrode. A second electrode may then be formed in contact with the electrically conductive mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.