Michael C. Gaidis
65Patents
11h-index
52Co-inventors
77Inventor score
Filing activity: Nov 7, 2002 → Mar 26, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6784091B1 | Maskless array protection process flow for forming interconnect vias in magnetic random access memory devices | Electricity | 32 | Expired |
| US7989224B2 | Sidewall coating for non-uniform spin momentum-transfer magnetic tunnel junction current flow | Electricity | 27 | Active |
| US7514271B2 | Method of forming high density planar magnetic domain wall memory | Emerging Cross-Sectional Technologies | 26 | Active |
| US7211446B2 | Method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory | Electricity | 22 | Expired |
| US7838873B2 | Structure for stochastic integrated circuit personalization | Electricity | 16 | Active |
| US7531367B2 | Utilizing sidewall spacer features to form magnetic tunnel junctions in an integrated circuit | Electricity | 16 | Active |
| US6812141B1 | Recessed metal lines for protective enclosure in integrated circuits | Electricity | 16 | Expired |
| US8009453B2 | High density planar magnetic domain wall memory apparatus | Emerging Cross-Sectional Technologies | 14 | Active |
| US7923712B2 | Phase change memory element with a peripheral connection to a thin film electrode | Electricity | 13 | Active |
| US6933204B2 | Method for improved alignment of magnetic tunnel junction elements | Electricity | 12 | Expired |
| US8852762B2 | Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers | Emerging Cross-Sectional Technologies | 11 | Active |
| US8124426B2 | Tunnel junction via | Emerging Cross-Sectional Technologies | 10 | Active |
| US8023305B2 | High density planar magnetic domain wall memory apparatus | Emerging Cross-Sectional Technologies | 10 | Active |
| US6660568B1 | BiLevel metallization for embedded back end of the line structures | Electricity | 9 | Expired |
| US9054300B2 | Thermally assisted MRAM with a multilayer encapsulant for low thermal conductivity | Electricity | 8 | Active |
| US7241668B2 | Planar magnetic tunnel junction substrate having recessed alignment marks | Electricity | 8 | Expired |
| US7635884B2 | Method and structure for forming slot via bitline for MRAM devices | Electricity | 8 | Expired |
| US7033881B2 | Method for fabricating magnetic field concentrators as liners around conductive wires in microelectronic devices | Electricity | 8 | Expired |
| US7381343B2 | Hard mask structure for patterning of materials | Electricity | 8 | Expired |
| US6974770B2 | Self-aligned mask to reduce cell layout area | Electricity | 7 | Expired |
| US7442647B1 | Structure and method for formation of cladded interconnects for MRAMs | Electricity | 7 | Active |
| US7550044B2 | Hard mask structure for patterning of materials | Electricity | 7 | Active |
| US8772889B2 | Magnetic domain wall shift register memory device readout | Electricity | 6 | Active |
| US8884387B2 | Pillar-based interconnects for magnetoresistive random access memory | Electricity | 6 | Active |
| US7399646B2 | Magnetic devices and techniques for formation thereof | Electricity | 6 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.