Resistive memory cell with sloped bottom electrode

US10003021B2 · kind B2 · utility

Assignee

• MICROCHIP TECHNOLOGY INCORPORATED · US

Inventors

• James Walls · Mesa, US
• Paul Fest · Chandler, US

Key dates

• Filing date: Feb 19, 2014
• Grant date: Jun 19, 2018
• Expiry date: Feb 19, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A method of forming a resistive memory cell, e.g., a CBRAM or ReRAM cell, may include forming a plurality of bottom electrode connections, depositing a bottom electrode layer over the bottom electrode connections, performing an etch to remove portions of the bottom electrode layer to form at least one upwardly-pointing bottom electrode region above the bottom electrode connections, each upwardly-pointing bottom electrode region defining a bottom electrode tip, and forming an electrolyte region and a top electrode over each bottom electrode tip such that the electrolyte region is arranged between the top electrode and the respective bottom electrode top.