Patent · US Active

Corrosion resistant abatement system

US10005025B2 · kind B2 · utility

0Cited by
3References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 7, 2015
Grant dateJun 26, 2018
Priority date
Expiry dateJun 8, 2036

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02C20/30
  • WIPO fieldChemical engineering
  • WIPO sectorChemistry

Abstract

Embodiments disclosed herein include a plasma source, and an abatement system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source is disclosed. The plasma source includes a body having an inlet and an outlet, and the inlet and the outlet are fluidly coupled within the body. The body further includes inside surfaces, and the inside surfaces are coated with yttrium oxide or diamond-like carbon. The plasma source further includes a flow splitter disposed in the body in a position that formed two flow paths between the inlet and the outlet, and a plasma generator disposed in a position operable to form a plasma within the body between the flow splitter and inside surfaces of the body.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.