Selective patterning of titanium encapsulation layers
US10005662B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2017 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | Aug 18, 2037 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/014
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method comprises forming an etch stop layer, a first titanium layer, a magnetic core, a second titanium layer, and patterning the first and second titanium layers. The etch stop layer is formed above a substrate. The first titanium layer is formed on the etch stop layer. The magnetic core is formed on the first titanium layer. The second titanium layer has a first portion encapsulating the magnetic core with the first titanium layer, and a second portion interfacing with the first titanium layer beyond the magnetic core. The patterning of the first and second titanium layers includes forming a mask over a magnetic core region and etching the first and second titanium layers exposed by the mask using a titanium etchant and a titanium oxide etchant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.