Patent · US Active

Selective patterning of titanium encapsulation layers

US10005662B2 · kind B2 · utility

0Cited by
3References
27Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 18, 2017
Grant dateJun 26, 2018
Priority date
Expiry dateAug 18, 2037

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81C2201/014
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A method comprises forming an etch stop layer, a first titanium layer, a magnetic core, a second titanium layer, and patterning the first and second titanium layers. The etch stop layer is formed above a substrate. The first titanium layer is formed on the etch stop layer. The magnetic core is formed on the first titanium layer. The second titanium layer has a first portion encapsulating the magnetic core with the first titanium layer, and a second portion interfacing with the first titanium layer beyond the magnetic core. The patterning of the first and second titanium layers includes forming a mask over a magnetic core region and etching the first and second titanium layers exposed by the mask using a titanium etchant and a titanium oxide etchant.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.