Mona Eissa
35Patents
8h-index
39Co-inventors
75Inventor score
Filing activity: Mar 4, 1997 → Sep 23, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6383928B1 | Post copper CMP clean | Electricity | 63 | Expired |
| US7833895B2 | TSVS having chemically exposed TSV tips for integrated circuit devices | Electricity | 19 | Active |
| US6030706A | Integrated circuit insulator and method | Emerging Cross-Sectional Technologies | 17 | Expired |
| US6939795B2 | Selective dry etching of tantalum and tantalum nitride | Electricity | 15 | Expired |
| US5888905A | Integrated circuit insulator and method | Electricity | 13 | Expired |
| US6806193B2 | CMP in-situ conditioning with pad and retaining ring clean | Chemistry; Metallurgy | 12 | Expired |
| US7179751B2 | Hydrogen plasma photoresist strip and polymeric residue cleanup process for low dielectric constant materials | Electricity | 10 | Expired |
| US5828132A | Semiconductor device having perfluorinated and non-fluorinated parylene intermetal dielectric | Electricity | 10 | Expired |
| US6723658B2 | Gate structure and method | Electricity | 8 | Expired |
| US7153782B2 | Effective solution and process to wet-etch metal-alloy films in semiconductor processing | Chemistry; Metallurgy | 7 | Expired |
| US6579798B2 | Processes for chemical-mechanical polishing of a semiconductor wafer | Electricity | 7 | Expired |
| US6551943B1 | Wet clean of organic silicate glass films | Electricity | 6 | Expired |
| US6150010A | Integrated circuit insulator | Emerging Cross-Sectional Technologies | 6 | Expired |
| US6316350A | Post fuse slag etch | Electricity | 6 | Expired |
| US6605536B2 | Treatment of low-k dielectric films to enable patterning of deep submicron features | Electricity | 5 | Expired |
| US7268073B2 | Post-polish treatment for inhibiting copper corrosion | Electricity | 5 | Expired |
| US6624086B1 | Effective solution and process to wet-etch metal-alloy films in semiconductor processing | Chemistry; Metallurgy | 5 | Expired |
| US6967173B2 | Hydrogen plasma photoresist strip and polymeric residue cleanup processs for low dielectric constant materials | Electricity | 2 | Expired |
| US6997192B2 | Control of dissolved gas levels in deionized water | Emerging Cross-Sectional Technologies | 2 | Expired |
| US9771261B1 | Selective patterning of an integrated fluxgate device | Performing Operations; Transporting | 1 | Active |
| US10017851B2 | Magnetic field annealing for integrated fluxgate sensors | Physics | 1 | Active |
| US7354853B2 | Selective dry etching of tantalum and tantalum nitride | Electricity | 1 | Active |
| US10266950B2 | Process for NiFe fluxgate device | Electricity | 0 | Active |
| US11508721B2 | Integrated fluxgate device | Physics | 0 | Active |
| US11075157B2 | IC having trench-based metal-insulator-metal capacitor | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.