Removal composition for selectively removing hard mask and methods thereof
US10005991B2 · kind B2 · utility
1Cited by
1References
19Claims
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Key dates
| Filing date | Oct 9, 2014 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | Oct 9, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present disclosure relates to a method for removing a hard mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, Ti and alloys of Ti and W from a semiconductor substrate. The method comprising contacting the semiconductor substrate with a removal composition. The removal composition comprises 0.1 wt % to 90 wt % of an oxidizing agent; 0.0001 wt % to 50 wt % of a carboxylate; and the balance up to 100 wt % of the removal composition comprising deionized water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.