Organodisilane precursors for ALD/CVD silicon-containing film applications
US10006122B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2015 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | Oct 2, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4482
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed are Si-containing film forming composition comprising organodisilane precursors. The organodisilane precursors have the formula (E-(CR)n-E)SiH2—SiHx(E-(CR)n-E)3-x, wherein x is 2 or 3; each n is independently 1 or 3; each (E-(CR)n-E) group is a monoanionic bidentate ligand bonding to the Si through each E; each E is independently chosen from NR, O or S; and each R is independently selected from the group consisting of H, a C1 to C6 alkyl group, and a C3-C20 aryl or heterocycle group. Also disclosed are methods of synthesizing the Si-containing film forming compositions and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.