Patent · US Active

Liquid doping systems and methods for controlled doping of single crystal semiconductor material

US10006145B2 · kind B2 · utility

0Cited by
7References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 31, 2013
Grant dateJun 26, 2018
Priority date
Expiry dateApr 15, 2034

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T117/1056
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A doping system for introducing liquid dopant into a melt of semiconductor or solar-grade material includes a dopant reservoir for holding dopant and a feeding tube. The dopant reservoir includes a body and a tapered end defining an opening having a smaller cross-sectional area than a cross-sectional area of the body. The feeding tube includes a first end extending from the opening of the reservoir, a second end distal from the first end, an angled tip disposed at the second end of the feeding tube, a first restriction for inhibiting the passage of solid dopant through the feeding tube, and a second restriction for controlling the flow of liquid dopant, the second restriction disposed near the second end of the feeding tube.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.