Stephan Haringer
18Patents
2h-index
28Co-inventors
50Inventor score
Filing activity: Jun 7, 2013 → Jan 9, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10060045B2 | Fabrication of indium-doped silicon by the czochralski method | Emerging Cross-Sectional Technologies | 3 | Active |
| US10023973B2 | Dopant feeding device for dispensing dopant | Chemistry; Metallurgy | 3 | Active |
| US10443148B2 | Methods for controlled doping of a melt including introducing liquid dopant below a surface of the melt | Chemistry; Metallurgy | 1 | Active |
| US11414778B2 | Production and use of dynamic state charts when growing a single crystal silicon ingot | Chemistry; Metallurgy | 1 | Active |
| US12195872B2 | Ingot puller apparatus that use a solid-phase dopant | Emerging Cross-Sectional Technologies | 0 | Active |
| US11028500B2 | Ingot puller apparatus that include a doping conduit with a porous partition member for subliming solid dopant | Chemistry; Metallurgy | 0 | Active |
| US10006145B2 | Liquid doping systems and methods for controlled doping of single crystal semiconductor material | Emerging Cross-Sectional Technologies | 0 | Active |
| US11499245B2 | Additive feed systems, ingot puller apparatus and methods for forming a single crystal silicon ingot with use of such additive feed systems | Chemistry; Metallurgy | 0 | Active |
| US11346016B2 | System for introducing dopant into a melt of semiconductor or solar-grade material via a feed tube | Chemistry; Metallurgy | 0 | Active |
| US11299819B2 | Gas doping systems for controlled doping of a melt of semiconductor or solar-grade material | Chemistry; Metallurgy | 0 | Active |
| US11976379B2 | Crystal pulling systems having fluid-filled exhaust tubes that extend through the housing | Emerging Cross-Sectional Technologies | 0 | Active |
| US10968533B2 | Feed system for crystal pulling systems | Chemistry; Metallurgy | 0 | Active |
| US10221500B2 | System for forming an ingot including crucible and conditioning members | Chemistry; Metallurgy | 0 | Active |
| US10889913B2 | Gas doping systems for controlled doping of a melt of semiconductor or solar-grade material | Chemistry; Metallurgy | 0 | Active |
| US11585010B2 | Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant | Emerging Cross-Sectional Technologies | 0 | Active |
| US11028499B2 | Methods for preparing a doped ingot | Chemistry; Metallurgy | 0 | Active |
| US11795571B2 | Production and use of dynamic state charts when growing a single crystal silicon ingot | Chemistry; Metallurgy | 0 | Active |
| US11085127B2 | Methods of introducing dopant into a melt of semiconductor or solar-grade material via a feed tube | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.