Thermal acid generators and photoresist pattern trimming compositions and methods
US10007179B2 · kind B2 · utility
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4References
18Claims
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Key dates
| Filing date | Oct 19, 2016 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | Oct 19, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07C2603/74
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided are ionic thermal acid generators comprising an anion of an aromatic sulfonic acid comprising one or more fluorinated alcohol group and a cation. Also provided are photoresist pattern trimming compositions that include an ionic thermal acid generator, a matrix polymer and a solvent, and methods of trimming a photoresist pattern using the trimming compositions. The thermal acid generators, compositions and methods find particular applicability in the manufacture of semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.