Patent · US Active

Memory device and system including the same

US10007454B2 · kind B2 · utility

0Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 14, 2016
Grant dateJun 26, 2018
Priority date
Expiry dateFeb 17, 2037

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C17/16
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory device may include a command controller configured to buffer an address based on a refresh enable signal and a repair enable signal. The memory device may include a fuse circuit configured to control a rupture operation of a refresh cell array and repair cell array corresponding to the address according to the refresh enable signal and the repair enable signal, and output a refresh control signal and a repair control signal during a boot-up operation. The memory device may include a refresh controller configured to control a refresh operation of a bank according to a refresh control signal. The memory device may include a repair controller configured to control a repair operation of the bank according to a redundancy signal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.