Non-volatile memory device and programming method thereof
US10008270B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 19, 2016 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | Dec 19, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3459
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A programming method of a non-volatile memory device including a plurality of memory cells arranged in a plurality of cell strings includes sequentially applying a first pass voltage to unselected word lines of word lines connected to the plurality of memory cells during a first interval and a second pass voltage higher than the first pass voltage to the unselected word lines during a second interval; and applying a discharge voltage lower than a program voltage to a selected word line of the word lines connected to the plurality of memory cells after applying the program voltage to the selected word line in the first interval, and applying the program voltage to the selected word line during the second interval.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.