Patent · US Active

Plasma processing apparatus and operation method thereof

US10008370B2 · kind B2 · utility

15Cited by
1References
5Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 17, 2015
Grant dateJun 26, 2018
Priority date
Expiry dateDec 17, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/3299
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A plasma apparatus of processing a wafer disposed in a processing chamber using plasma includes one window, another window, a light receiving unit, a light source, and an optical branching unit which is disposed between the light source and the other window, branches light emitted by the light source to an optical path toward the processing chamber and an optical path in other direction, and reflects light in the processing chamber from the other window, and a detection unit which detects the light having been emitted from the plasma and received by the light receiving unit using one branched light and other branched and reflected light. The apparatus processes the wafer according to a condition for the processing which is adjusted based on a result of the detection.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.