Method for producing a power semiconductor module

US10008392B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Alexander Hoehn · Soest, DE
• Georg Borghoff · Warstein, DE

Key dates

• Filing date: Feb 6, 2017
• Grant date: Jun 26, 2018
• Expiry date: Feb 6, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/13091
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A power semiconductor module is produced by: providing an electrically conductive terminal block having a screw thread, a connecting conductor having first and second sections, a module housing, a circuit carrier having a dielectric insulation carrier and an upper metallization layer on an upper side of the insulation carrier, and a semiconductor component; fitting the semiconductor component on the circuit carrier; producing a firm and electrically conductive connection between the terminal block and the connecting conductor at the first section; producing a material-fit and electrically conductive connection between the circuit carrier or the semiconductor component and the connecting conductor at the second section; and arranging the terminal block and the circuit carrier fitted with the semiconductor component on the module housing so the semiconductor component is arranged in the module housing and the screw thread is accessible from an outer side of the module housing.