Infineon Technologies AG
🏢 View company profile →14,943Patents
9,399Active
14,943Granted
59Portfolio score
Filing activity: Sep 18, 1995 → Sep 6, 2024 · 2,859 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7298009B2 | Semiconductor method and device with mixed orientation substrate | Electricity | 544 | Expired |
| US6531412B2 | Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications | Electricity | 518 | Expired |
| US7163900B2 | Using polydentate ligands for sealing pores in low-k dielectrics | Electricity | 503 | Expired |
| US7274867B2 | System and method for determining the temperature of a semiconductor wafer | Physics | 455 | Expired |
| US7528755B2 | Sigma-delta modulator for operating sensors | Physics | 361 | Active |
| US6789939B2 | Temperature sensor and method for operating a temperature sensor | Physics | 323 | Expired |
| US7288435B2 | Method for producing a cover, method for producing a packaged device | Electricity | 283 | Expired |
| US7297574B2 | Multi-chip device and method for producing a multi-chip device | Electricity | 282 | Expired |
| US8835978B2 | Lateral transistor on polymer | Electricity | 281 | Active |
| US8963321B2 | Semiconductor device including cladded base plate | Electricity | 275 | Active |
| US7054376B1 | High data rate ethernet transport facility over digital subscriber lines | Electricity | 270 | Expired |
| US7223612B2 | Alignment of MTJ stack to conductive lines in the absence of topography | Electricity | 267 | Expired |
| US6421820B1 | Semiconductor device fabrication using a photomask with assist features | Physics | 249 | Expired |
| US6479373B2 | Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases | Electricity | 229 | Expired |
| US7158359B2 | Circuit configuration having a semiconductor switch and a protection circuit | Electricity | 211 | Expired |
| US7166533B2 | Phase change memory cell defined by a pattern shrink material process | Electricity | 200 | Expired |
| US7214958B2 | Phase change memory cell with high read margin at low power operation | Physics | 199 | Expired |
| US7041568B2 | Method for the production of a self-adjusted structure on a semiconductor wafer | Electricity | 197 | Expired |
| US9723716B2 | Contact pad structure, an electronic component, and a method for manufacturing a contact pad structure | Emerging Cross-Sectional Technologies | 194 | Active |
| US6893972B2 | Process for sidewall amplification of resist structures and for the production of structures having reduced structure size | Electricity | 192 | Expired |
| US7469391B2 | Method and device of analyzing crosstalk effects in an electronic device | Physics | 191 | Active |
| US7200021B2 | Stacked DRAM memory chip for a dual inline memory module (DIMM) | Electricity | 185 | Expired |
| US6745380B2 | Method for optimizing and method for producing a layout for a mask, preferably for use in semiconductor production, and computer program therefor | Physics | 181 | Expired |
| US7772039B2 | Procedure for arranging chips of a first substrate on a second substrate | Electricity | 171 | Expired |
| US6707098B2 | Electronic device and method for fabricating an electronic device | Emerging Cross-Sectional Technologies | 170 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.