Radio frequency isolation using substrate opening
US10008455B2 · kind B2 · utility
4Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 13, 2016 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | May 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Radio-frequency (RF) devices are fabricated by providing a field-effect transistor (FET) formed over a an oxide layer formed on a substrate layer and removing at least a portion of the substrate layer to form an opening exposing at least a portion of a backside of the oxide layer, the opening being positioned to enhance RF performance for one or more components of the RF device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.