David Scott Whitefield
86Patents
11h-index
47Co-inventors
74Inventor score
Filing activity: Dec 13, 2010 → May 28, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9806676B2 | Power amplification system with programmable load line | Electricity | 102 | Active |
| US9092393B2 | Dual mode serial/parallel interface and use thereof in improved wireless devices and switching components | Emerging Cross-Sectional Technologies | 54 | Active |
| US9990322B2 | Dual serial/parallel interface devices and switching components | Emerging Cross-Sectional Technologies | 44 | Active |
| US9774300B2 | Transformer-based doherty power amplifier | Electricity | 41 | Active |
| US9496902B2 | Apparatus and methods for reconfigurable directional couplers in an RF transceiver with selectable phase shifters | Electricity | 31 | Active |
| US9553617B2 | Apparatus and methods for reconfigurable directional couplers in an RF transceiver with controllable capacitive coupling | Electricity | 29 | Active |
| US9721936B2 | Field-effect transistor stack voltage compensation | Electricity | 16 | Active |
| US9866244B2 | Electromagnetic couplers for multi-frequency power detection | Electricity | 15 | Active |
| US9954564B2 | Electromagnetic couplers with multi-band filtering | Electricity | 13 | Active |
| US9948271B2 | Methods for reconfiguring directional couplers in an RF transceiver | Electricity | 12 | Active |
| US10229902B2 | Stack device having voltage compensation | Electricity | 11 | Active |
| US9614269B2 | RF coupler with adjustable termination impedance | Electricity | 10 | Active |
| US9941856B2 | Apparatus for reconfigurable directional couplers in an RF transceiver with selectable phase shifters | Electricity | 10 | Active |
| US9831192B2 | Cavity formation in semiconductor devices | Electricity | 10 | Active |
| US9960750B2 | Apparatus for reconfigurable directional couplers in an RF transceiver with controllable capacitive coupling | Electricity | 10 | Active |
| US9859225B2 | Backside cavity formation in semiconductor devices | Electricity | 9 | Active |
| US9806094B2 | Non-uniform spacing in transistor stacks | Electricity | 9 | Active |
| US9837362B2 | Cavity formation in interface layer in semiconductor devices | Electricity | 8 | Active |
| US10153306B2 | Transistor layout with low aspect ratio | Electricity | 7 | Active |
| US9960747B2 | Integrated filter and directional coupler assemblies | Electricity | 6 | Active |
| US10410957B2 | Body contacts for field-effect transistors | Electricity | 6 | Active |
| US10249575B2 | Radio-frequency isolation using cavity formed in interface layer | Electricity | 6 | Active |
| US9692103B2 | RF coupler with switch between coupler port and adjustable termination impedance circuit | Electricity | 6 | Active |
| US10389350B2 | Stacked auxiliary field-effect transistor configurations for radio frequency applications | Electricity | 5 | Active |
| US9812757B2 | RF coupler having coupled line with adjustable length | Electricity | 5 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.