Electrostatic discharge protection semiconductor device
US10008489B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2015 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | May 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/813
Abstract
An electrostatic discharge protection semiconductor device includes a substrate, a gate set positioned on the substrate, a source region and a drain region formed in the substrate respectively at two sides of the gate set, at least a first doped region formed in the drain region, and at least a second doped region formed in the substrate. The source region and the drain region include a first conductivity type, the first doped region and the second doped region include a second conductivity type, and the first conductivity and the second conductivity type are complementary to each other. The first doped region and the second doped region are electrically connected to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.