Electrostatic discharge (ESD) protection device and method fabricating the ESD protection device
US10008492B2 · kind B2 · utility
4Cited by
3References
22Claims
0Family size
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Key dates
| Filing date | Nov 16, 2016 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | Nov 23, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/813
Abstract
An electrostatic discharge (ESD) device includes a gate structure, disposed on a substrate. A drain doped region of a first conductive type is in the substrate, adjacent to a first side of the gate structure, wherein the drain doped region has a first impurity concentration. A first doped region of the first conductive type is disposed within the drain doped region and being at least distant from the gate structure by a distance. The first doped region has a second impurity concentration lower than the first impurity concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.