Image sensor and method for fabricating the same
US10008526B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2016 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | Aug 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/812
Abstract
An image sensor may include: a photoelectric conversion element suitable for generating a photo charge in response to incident light; and a transfer transistor suitable for transferring the photo charge generated by the photoelectric conversion element to a floating diffusion in response to a transfer signal, the transfer transistor comprising a first transfer gate formed over the photoelectric conversion element; an opening formed in the first transfer gate and exposing the photoelectric conversion element; a second transfer gate formed in the opening; and a channel layer interposed between the first and second transfer gates and between the photoelectric conversion element and the second transfer gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.