Non-volatile resistive memory cells
US10008666B2 · kind B2 · utility
2Cited by
6References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2012 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | Jul 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/80
Abstract
Examples of the present disclosure include non-volatile resistive memory cells and methods of forming the same. An example of a non-volatile resistive memory cell includes a first portion of the non-volatile resistive memory cell formed as a vertically-extending structure on a first electrode, where the first portion comprises at least one memristive material across a width of the vertically-extending structure. The non-volatile resistive memory cell also includes a second portion formed as a vertically-extending memristive material structure on at least one sidewall of the first portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.