Inventor · Seoul, KR

Hans S. Cho

51Patents
9h-index
43Co-inventors
74Inventor score

Filing activity: Aug 9, 2005 → Mar 24, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US7474811B1 Nanowire photonic apparatus employing optical field confinement Electricity 34 Active
US8258050B2 Method of making light trapping crystalline structures Emerging Cross-Sectional Technologies 33 Active
US8129710B2 Plasmon enhanced nanowire light emitting diode Electricity 26 Active
US7566364B2 Method of fabricating orientation-controlled single-crystalline wire and method of fabricating transistor having the same Chemistry; Metallurgy 24 Active
US7297615B2 Si nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same Emerging Cross-Sectional Technologies 22 Expired
US8101473B2 Rounded three-dimensional germanium active channel for transistors and sensors Electricity 19 Active
US8203137B2 Photonic structure Physics 15 Active
US7575962B2 Fin structure and method of manufacturing fin transistor adopting the fin structure Electricity 13 Active
US7611932B2 Method of manufacturing a thin film transistor Electricity 10 Active
US8309404B2 Poly-Si thin film transistor and organic light-emitting display having the same Electricity 9 Active
US8405062B2 Method of forming poly-si pattern, diode having poly-si pattern, multi-layer cross point resistive memory device having poly-si pattern, and method of manufacturing the diode and the memory device Electricity 9 Active
US7859054B2 Poly-Si thin film transistor and organic light-emitting display having the same Electricity 9 Active
US8547727B2 Memristive device Electricity 8 Active
US7557411B2 Semi-conductor-on-insulator structure, semiconductor devices using the same and method of manufacturing the same Electricity 8 Active
US7999322B2 Poly-Si thin film transistor and organic light-emitting display having the same Electricity 7 Active
US7642177B2 Method of manufacturing nanowire Emerging Cross-Sectional Technologies 7 Active
US8187905B2 Method of forming a microlens and a method for manufacturing an image sensor Electricity 5 Active
US9847378B2 Resistive memory devices with a multi-component electrode Physics 5 Active
US8389388B2 Photonic device and method of making the same Emerging Cross-Sectional Technologies 5 Active
US9847482B2 Resistive memory devices with an oxygen-supplying layer Electricity 5 Active
US7772711B2 Semiconductor device including single crystal silicon layer Emerging Cross-Sectional Technologies 4 Active
US7662678B2 Method of forming a more highly-oriented silicon layer and substrate having the same Chemistry; Metallurgy 4 Active
US8803212B2 Three-dimensional crossbar array Physics 4 Active
US10109346B2 Apparatus having a memory cell and a shunt device Physics 3 Active
US7750424B2 Microlens and an image sensor including a microlens Electricity 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.