Patent · US Active

Sensing chip

US10012646B2 · kind B2 · utility

0Cited by
9References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 30, 2015
Grant dateJul 3, 2018
Priority date
Expiry dateMay 25, 2036

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01N33/553
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A sensing chip including a substrate, a plurality of metal nanostructures, a first surface modified layer and a second surface modified layer is provided. The metal nanostructures are disposed on the substrate. The first surface modified layer is disposed on a surface of the metal nanostructures, wherein the first surface modified layer includes a plurality of thiol group-containing molecules. The second surface modified layer is disposed on a surface of the substrate, wherein the second surface modified layer includes a plurality of silyl group-containing molecules.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.