Patent · US Active

Method for differential heating of elongate nano-scaled structures

US10014178B2 · kind B2 · utility

0Cited by

2References

16Claims

0Family size

Assignee

IMEC VZW · BE

Inventors

Wilfried Vandervorst · Mechelen, BE
Janusz Bogdanowicz · Liège, BE

Key dates

Filing date	Nov 17, 2016
Grant date	Jul 3, 2018
Priority date	—
Expiry date	Nov 17, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/024
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present disclosure is related to a method of fabricating a semiconductor device involving the production of at least two non-parallel nano-scaled structures on a substrate. These structures are heated to different temperatures by exposing them simultaneously to polarized light having a wavelength and polarization such that a difference in absorption of light occurs in the first and second nanostructure. In some cases the light is polarized in a plane that is parallel to one of the structures. The present disclosure may provide differential heating of semiconductor structures of different materials, such as Ge and Si fins.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.