Unidirectional metal on layer with ebeam
US10014256B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2014 |
| Grant date | Jul 3, 2018 |
| Priority date | — |
| Expiry date | Dec 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31764
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a layout for a metallization layer of an integrated circuit includes a first region having a plurality of unidirectional lines of a first width and a first pitch and parallel with a first direction. The layout also includes a second region having a plurality of unidirectional lines of a second width and a second pitch and parallel with the first direction, the second width and the second pitch different than the first width and the first pitch, respectively. The layout also includes a third region having a plurality of unidirectional lines of a third width and a third pitch and parallel with the first direction, the third width and the third pitch different than the first and second widths and different than the first and second pitches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.