Yan Borodovsky
37Patents
9h-index
21Co-inventors
75Inventor score
Filing activity: Mar 2, 1984 → Jan 18, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5424154A | Lithographic emhancement method and apparatus for randomly spaced structures | Physics | 138 | Expired |
| US5498579A | Method of producing semiconductor device layer layout | Physics | 83 | Expired |
| US5532090A | Method and apparatus for enhanced contact and via lithography | Physics | 78 | Expired |
| US6069739A | Method and lens arrangement to improve imaging performance of microlithography exposure tool | Emerging Cross-Sectional Technologies | 24 | Expired |
| US6021009A | Method and apparatus to improve across field dimensional control in a microlithography tool | Physics | 22 | Expired |
| US4529685A | Method for making integrated circuit devices using a layer of indium arsenide as an antireflective coating | Electricity | 20 | Expired |
| US5840448A | Phase shifting mask having a phase shift that minimizes critical dimension sensitivity to manufacturing and process variance | Physics | 18 | Expired |
| US4767215A | Lens characterization apparatus and method | Physics | 10 | Expired |
| US10014256B2 | Unidirectional metal on layer with ebeam | Electricity | 9 | Active |
| US5801821A | Photolithography method using coherence distance control | Physics | 8 | Expired |
| US5946079A | Photolithography method using coherence distance control | Physics | 8 | Expired |
| US7142282B2 | Device including contacts | Physics | 8 | Expired |
| US8975138B2 | Method of creating a maskless air gap in back end interconnects with double self-aligned vias | Electricity | 6 | Active |
| US9899182B2 | Corner rounding correction for electron beam (Ebeam) direct write system | Electricity | 5 | Active |
| US7512926B2 | Phase-shifting masks with sub-wavelength diffractive optical elements | Physics | 4 | Active |
| US4672420A | Integrated circuit structure having conductive, protective layer for multilayer metallization to permit reworking | Electricity | 3 | Expired |
| US8122388B2 | Phase-shifting masks with sub-wavelength diffractive optical elements | Physics | 2 | Active |
| US10191376B2 | Cross scan proximity correction with ebeam universal cutter | Electricity | 2 | Active |
| US4580332A | Forming a conductive, protective layer for multilayer metallization | Emerging Cross-Sectional Technologies | 1 | Expired |
| US7254803B2 | Test structures for feature fidelity improvement | Physics | 1 | Expired |
| US7892706B2 | Sub-wavelength diffractive elements to reduce corner rounding | Physics | 1 | Active |
| US7245352B2 | Alignment using latent images | Physics | 1 | Expired |
| US10067416B2 | Ebeam three beam aperture array | Electricity | 1 | Active |
| US10386722B2 | Ebeam staggered beam aperture array | Electricity | 1 | Active |
| US7732106B2 | Methods for etching devices used in lithography | Physics | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.