Field-effect transistor devices having proximity contact features
US10014331B2 · kind B2 · utility
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1References
20Claims
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Key dates
| Filing date | Mar 31, 2017 |
| Grant date | Jul 3, 2018 |
| Priority date | — |
| Expiry date | Mar 31, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Field-effect transistor (FET) devices are described herein that include an insulator layer, a field-effect transistor implemented over the insulator layer, a substrate layer implemented under the insulator layer, and a proximity electrode that extends at least partially through the insulator layer and positioned from the FET by a distance that is less than about 5 μm. The FET device can include one or more substrate contact features as well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.